Formation of self-assembled InAs quantum dots on (110) GaAs substrates
Self-assembled InAs QDs were grown on (110) GaAs substrates by incorporating a thin AlAs layer below each InAs QD layer. QD formation was verified by PL spectroscopy and AFM.
| Main Authors: | , , , , |
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| Format: | Journal article |
| Jezik: | English |
| Izdano: |
2003
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