Lowest surface recombination in n-type oxidised crystalline silicon by means of extrinsic field effect passivation
Surface recombination remains a major factor limiting the efficiency of silicon solar cells. The post-processing of dielectric films used as surface coatings has been previously demonstrated an effective technique to improve their passivation quality. In this paper extrinsic methods are demonstrated...
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| Format: | Conference item |
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EU PVSEC
2016
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