300-KHZ PULSE PLASMA-ETCHING OF GAAS USING A MIXTURE OF CICH3 AND H2

Bibliographic Details
Main Authors: Law, V, Tewordt, M, Clary, D, Jones, G
Format: Conference item
Published: 1993
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author Law, V
Tewordt, M
Clary, D
Jones, G
author_facet Law, V
Tewordt, M
Clary, D
Jones, G
author_sort Law, V
collection OXFORD
description
first_indexed 2024-03-07T01:31:37Z
format Conference item
id oxford-uuid:93cda387-f57e-4970-aeb2-9c83fc1f9d82
institution University of Oxford
last_indexed 2024-03-07T01:31:37Z
publishDate 1993
record_format dspace
spelling oxford-uuid:93cda387-f57e-4970-aeb2-9c83fc1f9d822022-03-26T23:34:46Z300-KHZ PULSE PLASMA-ETCHING OF GAAS USING A MIXTURE OF CICH3 AND H2Conference itemhttp://purl.org/coar/resource_type/c_5794uuid:93cda387-f57e-4970-aeb2-9c83fc1f9d82Symplectic Elements at Oxford1993Law, VTewordt, MClary, DJones, G
spellingShingle Law, V
Tewordt, M
Clary, D
Jones, G
300-KHZ PULSE PLASMA-ETCHING OF GAAS USING A MIXTURE OF CICH3 AND H2
title 300-KHZ PULSE PLASMA-ETCHING OF GAAS USING A MIXTURE OF CICH3 AND H2
title_full 300-KHZ PULSE PLASMA-ETCHING OF GAAS USING A MIXTURE OF CICH3 AND H2
title_fullStr 300-KHZ PULSE PLASMA-ETCHING OF GAAS USING A MIXTURE OF CICH3 AND H2
title_full_unstemmed 300-KHZ PULSE PLASMA-ETCHING OF GAAS USING A MIXTURE OF CICH3 AND H2
title_short 300-KHZ PULSE PLASMA-ETCHING OF GAAS USING A MIXTURE OF CICH3 AND H2
title_sort 300 khz pulse plasma etching of gaas using a mixture of cich3 and h2
work_keys_str_mv AT lawv 300khzpulseplasmaetchingofgaasusingamixtureofcich3andh2
AT tewordtm 300khzpulseplasmaetchingofgaasusingamixtureofcich3andh2
AT claryd 300khzpulseplasmaetchingofgaasusingamixtureofcich3andh2
AT jonesg 300khzpulseplasmaetchingofgaasusingamixtureofcich3andh2