300-KHZ PULSE PLASMA-ETCHING OF GAAS USING A MIXTURE OF CICH3 AND H2
Main Authors: | , , , |
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Format: | Conference item |
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1993
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_version_ | 1797082708429504512 |
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author | Law, V Tewordt, M Clary, D Jones, G |
author_facet | Law, V Tewordt, M Clary, D Jones, G |
author_sort | Law, V |
collection | OXFORD |
description | |
first_indexed | 2024-03-07T01:31:37Z |
format | Conference item |
id | oxford-uuid:93cda387-f57e-4970-aeb2-9c83fc1f9d82 |
institution | University of Oxford |
last_indexed | 2024-03-07T01:31:37Z |
publishDate | 1993 |
record_format | dspace |
spelling | oxford-uuid:93cda387-f57e-4970-aeb2-9c83fc1f9d822022-03-26T23:34:46Z300-KHZ PULSE PLASMA-ETCHING OF GAAS USING A MIXTURE OF CICH3 AND H2Conference itemhttp://purl.org/coar/resource_type/c_5794uuid:93cda387-f57e-4970-aeb2-9c83fc1f9d82Symplectic Elements at Oxford1993Law, VTewordt, MClary, DJones, G |
spellingShingle | Law, V Tewordt, M Clary, D Jones, G 300-KHZ PULSE PLASMA-ETCHING OF GAAS USING A MIXTURE OF CICH3 AND H2 |
title | 300-KHZ PULSE PLASMA-ETCHING OF GAAS USING A MIXTURE OF CICH3 AND H2 |
title_full | 300-KHZ PULSE PLASMA-ETCHING OF GAAS USING A MIXTURE OF CICH3 AND H2 |
title_fullStr | 300-KHZ PULSE PLASMA-ETCHING OF GAAS USING A MIXTURE OF CICH3 AND H2 |
title_full_unstemmed | 300-KHZ PULSE PLASMA-ETCHING OF GAAS USING A MIXTURE OF CICH3 AND H2 |
title_short | 300-KHZ PULSE PLASMA-ETCHING OF GAAS USING A MIXTURE OF CICH3 AND H2 |
title_sort | 300 khz pulse plasma etching of gaas using a mixture of cich3 and h2 |
work_keys_str_mv | AT lawv 300khzpulseplasmaetchingofgaasusingamixtureofcich3andh2 AT tewordtm 300khzpulseplasmaetchingofgaasusingamixtureofcich3andh2 AT claryd 300khzpulseplasmaetchingofgaasusingamixtureofcich3andh2 AT jonesg 300khzpulseplasmaetchingofgaasusingamixtureofcich3andh2 |