Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications.
We successfully fabricated ferroelectric-gate field effect transistor (FEFET)-based nonvolatile memory devices using an n-type Si nanowire coated with omega-shaped-gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) via a low-temperature fabrication process. Our FEFET memory devic...
| Main Authors: | , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
Institute of Physics Publishing
2014
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