Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications.
We successfully fabricated ferroelectric-gate field effect transistor (FEFET)-based nonvolatile memory devices using an n-type Si nanowire coated with omega-shaped-gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) via a low-temperature fabrication process. Our FEFET memory devic...
| Main Authors: | , , , , , , |
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| Format: | Journal article |
| Language: | English |
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Institute of Physics Publishing
2014
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| _version_ | 1797082880637140992 |
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| author | Van, N Lee, J Sohn, J Cha, S Whang, D Kim, J Kang, D |
| author_facet | Van, N Lee, J Sohn, J Cha, S Whang, D Kim, J Kang, D |
| author_sort | Van, N |
| collection | OXFORD |
| description | We successfully fabricated ferroelectric-gate field effect transistor (FEFET)-based nonvolatile memory devices using an n-type Si nanowire coated with omega-shaped-gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) via a low-temperature fabrication process. Our FEFET memory devices with controllable threshold voltage via adjustment of the doping concentration exhibit excellent memory characteristics with ultra-low ON state power dissipation (≤3 nW), a large modulation in channel conductance between the ON and OFF states exceeding 10(5), a long retention time of over 3 × 10(4) s and a high endurance of over 10(5) programming cycles whilst maintaining an I ON/I OFF ratio higher than 10(3). This result may be promising for next-generation nonvolatile memory on flexible substrate applications. |
| first_indexed | 2024-03-07T01:34:09Z |
| format | Journal article |
| id | oxford-uuid:949419c2-768a-4101-bd52-d1c33bab35a7 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T01:34:09Z |
| publishDate | 2014 |
| publisher | Institute of Physics Publishing |
| record_format | dspace |
| spelling | oxford-uuid:949419c2-768a-4101-bd52-d1c33bab35a72022-03-26T23:40:26ZTunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications.Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:949419c2-768a-4101-bd52-d1c33bab35a7EnglishSymplectic Elements at OxfordInstitute of Physics Publishing2014Van, NLee, JSohn, JCha, SWhang, DKim, JKang, DWe successfully fabricated ferroelectric-gate field effect transistor (FEFET)-based nonvolatile memory devices using an n-type Si nanowire coated with omega-shaped-gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) via a low-temperature fabrication process. Our FEFET memory devices with controllable threshold voltage via adjustment of the doping concentration exhibit excellent memory characteristics with ultra-low ON state power dissipation (≤3 nW), a large modulation in channel conductance between the ON and OFF states exceeding 10(5), a long retention time of over 3 × 10(4) s and a high endurance of over 10(5) programming cycles whilst maintaining an I ON/I OFF ratio higher than 10(3). This result may be promising for next-generation nonvolatile memory on flexible substrate applications. |
| spellingShingle | Van, N Lee, J Sohn, J Cha, S Whang, D Kim, J Kang, D Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications. |
| title | Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications. |
| title_full | Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications. |
| title_fullStr | Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications. |
| title_full_unstemmed | Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications. |
| title_short | Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications. |
| title_sort | tunable threshold voltage of an n type si nanowire ferroelectric gate field effect transistor for high performance nonvolatile memory applications |
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