ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON.

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON.

The EBIC mode of the SEM was used to study the electronic properties of individual dislocations in silicon at high spatial resolution. A theory of EBIC, relating the contrast to the fundamental defect parameters, such as the carrier lifetime in the vicinity of the defect, is presented. A means for t...

Disgrifiad llawn

Manylion Llyfryddiaeth
Prif Awduron:	Ourmazd, A, Wilshaw, P, Booker, G
Fformat:	Journal article
Iaith:	English
Cyhoeddwyd:	1982

Eitemau Tebyg

THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON
gan: Ourmazd, A, et al.
Cyhoeddwyd: (1983)

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULTS.
gan: Ourmazd, A, et al.
Cyhoeddwyd: (1982)

TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
gan: Ourmazd, A, et al.
Cyhoeddwyd: (1983)

THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON
gan: Ourmazd, A, et al.
Cyhoeddwyd: (1983)

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATIONS IN SILICON USING A COMPUTERIZED EBIC SYSTEM
gan: Wilshaw, P, et al.
Cyhoeddwyd: (1983)

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATION IN SILICON USING A COMPUTERISED EBIC SYSTEM.
gan: Wilshaw, P, et al.
Cyhoeddwyd: (1983)

NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON.
gan: Wilshaw, P, et al.
Cyhoeddwyd: (1985)

RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE
gan: Wilshaw, P, et al.
Cyhoeddwyd: (1989)

DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS.
gan: Wilshaw, P, et al.
Cyhoeddwyd: (1986)

MEASUREMENT OF CONTRAST FROM INDIVIDUAL DISLOCATIONS BY LOCK-IN EBIC
gan: Ourmazd, A, et al.
Cyhoeddwyd: (1982)

The segregation behaviour of oxygen at dislocations in silicon
gan: Senkader, S, et al.
Cyhoeddwyd: (1999)

GETTERING OF COPPER TO OXIDATION INDUCED STACKING-FAULTS IN SILICON
gan: Decoteau, M, et al.
Cyhoeddwyd: (1990)

The Shockley–Queisser limit and the conversion efficiency of silicon-based solar cells
gan: A.R. Zanatta
Cyhoeddwyd: (2022-12-01)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
gan: Wilshaw, P, et al.
Cyhoeddwyd: (1989)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
gan: Wilshaw, P, et al.
Cyhoeddwyd: (1989)

Stable Stacking Faults Bounded by Frank Partial Dislocations in Al7075 Formed through Precipitate and Dislocation Interactions
gan: Sijie Li, et al.
Cyhoeddwyd: (2017-12-01)

An SEM EBIC study of the electronic properties of dislocations in silicon
gan: Wilshaw, P, et al.
Cyhoeddwyd: (1984)

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
gan: Fell, T, et al.
Cyhoeddwyd: (1989)

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
gan: Fell, T, et al.
Cyhoeddwyd: (1989)

Observation of a blocking to channeling transition for MeV protons at stacking faults in silicon.
gan: King, P, et al.
Cyhoeddwyd: (1995)

On a SHOCKLEY-READ-HALL model for semiconductors
gan: Knežević-Miljanović Julka
Cyhoeddwyd: (2013-01-01)

On the locking of dislocations by oxygen in silicon
gan: Senkader, S, et al.
Cyhoeddwyd: (2001)

Impurity locking of dislocations in silicon
gan: Giannattasio, A, et al.
Cyhoeddwyd: (2004)

The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon
gan: Giannattasio, A, et al.
Cyhoeddwyd: (2004)

Locking of dislocations by oxygen in Cz-silicon
gan: Senkader, S, et al.
Cyhoeddwyd: (1999)

EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON
gan: Fell, T, et al.
Cyhoeddwyd: (1993)

Beyond the Shockley-Queisser limit : intermediate band and tandem solar cells leveraging silicon and CdTe technology
gan: Mailoa, Jonathan P
Cyhoeddwyd: (2016)

Influence of non-radiative exciton recombination in silicon on photoconversion efficiency. 2. Short Shockley–Read–Hall lifetimes
gan: A.V. Sachenko, et al.
Cyhoeddwyd: (2017-04-01)

Generation of dislocation glide loops in Czochralski silicon
gan: Giannattasio, A, et al.
Cyhoeddwyd: (2002)

Dislocation locking by nitrogen impurities in FZ-silicon
gan: Giannattasio, A, et al.
Cyhoeddwyd: (2003)

Generalized stacking fault energy surface mismatch and dislocation transformation
gan: Longsheng Feng, et al.
Cyhoeddwyd: (2021-12-01)

Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion
gan: Senkader, S, et al.
Cyhoeddwyd: (2001)

Resolving the Corbino Shockley-Ramo paradox for hydrodynamic current noise
gan: Aaron Hui
Cyhoeddwyd: (2024-12-01)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
gan: Fell, T, et al.
Cyhoeddwyd: (1991)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
gan: Fell, T, et al.
Cyhoeddwyd: (1991)

Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon
gan: Murphy, J, et al.
Cyhoeddwyd: (2012)

Solute atom segregation to I1 stacking fault and its bounding partial dislocations in a Mg–Bi alloy
gan: Cong He, et al.
Cyhoeddwyd: (2024-08-01)

Stacking-fault imaging using transmission ion channeling.
gan: King, P, et al.
Cyhoeddwyd: (1995)

APPLICATION OF TRANSMISSION ION CHANNELING TO THE IMAGING OF STACKING-FAULTS
gan: King, P, et al.
Cyhoeddwyd: (1995)

Are Shockley-Read-Hall and ABC models valid for lead halide perovskites?
gan: Alexander Kiligaridis, et al.
Cyhoeddwyd: (2021-06-01)