ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON.
The EBIC mode of the SEM was used to study the electronic properties of individual dislocations in silicon at high spatial resolution. A theory of EBIC, relating the contrast to the fundamental defect parameters, such as the carrier lifetime in the vicinity of the defect, is presented. A means for t...
| Հիմնական հեղինակներ: | , , |
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| Ձևաչափ: | Journal article |
| Լեզու: | English |
| Հրապարակվել է: |
1982
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