ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON.

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON.

The EBIC mode of the SEM was used to study the electronic properties of individual dislocations in silicon at high spatial resolution. A theory of EBIC, relating the contrast to the fundamental defect parameters, such as the carrier lifetime in the vicinity of the defect, is presented. A means for t...

書誌詳細
主要な著者:	Ourmazd, A, Wilshaw, P, Booker, G
フォーマット:	Journal article
言語:	English
出版事項:	1982

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