Growth and investigation of epitaxial semiconductor films
<p>The work described in this thesis is concerned with the growth and examination of thin Si and Ge films. These were deposited by sublimation and evaporation techniques in UHV, using apparatus constructed by the author, The source of deposited material was heated by electron bombardment, whil...
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| Aineistotyyppi: | Opinnäyte |
| Julkaistu: |
1972
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