Growth and investigation of epitaxial semiconductor films
<p>The work described in this thesis is concerned with the growth and examination of thin Si and Ge films. These were deposited by sublimation and evaporation techniques in UHV, using apparatus constructed by the author, The source of deposited material was heated by electron bombardment, whil...
מחבר ראשי: | Cullis, A |
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פורמט: | Thesis |
יצא לאור: |
1972
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פריטים דומים
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Epitaxial Growth and Processing of Compound Semiconductors
מאת: Kolodziejski, Leslie A., et al.
יצא לאור: (2010) -
Epitaxial Growth and Processing of Compound Semiconductors
מאת: Kolodziejski, Leslie A., et al.
יצא לאור: (2010) -
On the growth of semiconductor-based epitaxial and oxide films from low energy ion beams
מאת: Vancauwenberghe, Olivier P. J.
יצא לאור: (2023) -
The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
מאת: Emmanuel Wangila, et al.
יצא לאור: (2024-04-01) -
REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
מאת: Foord, J, et al.
יצא לאור: (1993)