ARSENIC SEGREGATION TO SILICON SILICON-OXIDE INTERFACES
Arsenic segregation at polycrystalline silicon/silicon and polycrystalline silicon/silicon oxide interfaces was examined directly by transmission electron microscopy (TEM) and scanning transmission electron microscopy(STEM). Segregation occurring precisely at these interfaces was identified. A simpl...
Main Authors: | , , , |
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Format: | Journal article |
Language: | English |
Published: |
1985
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