ARSENIC SEGREGATION TO SILICON SILICON-OXIDE INTERFACES

Arsenic segregation at polycrystalline silicon/silicon and polycrystalline silicon/silicon oxide interfaces was examined directly by transmission electron microscopy (TEM) and scanning transmission electron microscopy(STEM). Segregation occurring precisely at these interfaces was identified. A simpl...

Full description

Bibliographic Details
Main Authors: Wong, C, Grovenor, C, Batson, P, Isaac, R
Format: Journal article
Language:English
Published: 1985