ARSENIC SEGREGATION TO SILICON SILICON-OXIDE INTERFACES

ARSENIC SEGREGATION TO SILICON SILICON-OXIDE INTERFACES

Arsenic segregation at polycrystalline silicon/silicon and polycrystalline silicon/silicon oxide interfaces was examined directly by transmission electron microscopy (TEM) and scanning transmission electron microscopy(STEM). Segregation occurring precisely at these interfaces was identified. A simpl...

Full description

Bibliographic Details
Main Authors:	Wong, C, Grovenor, C, Batson, P, Isaac, R
Format:	Journal article
Language:	English
Published:	1985

Similar Items

ARSENIC SEGREGATION IN POLYCRYSTALLINE SILICON
by: Wong, C, et al.
Published: (1983)

EFFECT OF ARSENIC SEGREGATION ON THE ELECTRICAL-PROPERTIES OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON
by: Wong, C, et al.
Published: (1985)

OXIDATION AND THE STRUCTURE OF THE SILICON-OXIDE INTERFACE
by: Stoneham, A, et al.
Published: (1987)

Segregation mechanism of arsenic dopants at grain boundaries in silicon
by: Yutaka Ohno, et al.
Published: (2021-01-01)

STRUCTURAL AND ELECTRICAL EFFECTS OF DOPANT SEGREGATION TO SILICON GRAIN-BOUNDARIES
by: Grovenor, C, et al.
Published: (1985)

GRAIN-BOUNDARY SOLUTE INTERACTIONS IN POLYCRYSTALLINE SILICON AND GERMANIUM
by: Smith, D, et al.
Published: (1984)

Kinetics of Arsenic Surface Segregation in Scrap-Based Silicon Electrical Steel
by: Darja Steiner Petrovič
Published: (2020-12-01)

SEGREGATION TO GRAIN BOUNDARIES IN Si.
by: Grovenor, C, et al.
Published: (1984)

AS SEGREGATION TO GRAIN-BOUNDARIES IN SI
by: Grovenor, C, et al.
Published: (1984)

INVESTIGATIONS OF METAL-SILICON INTERFACES BY TIME-OF-FLIGHT ATOM PROBE.
by: Grovenor, C, et al.
Published: (1983)

The segregation behaviour of oxygen at dislocations in silicon
by: Senkader, S, et al.
Published: (1999)

Electronic states at the silicon-silicon dioxide interface /
by: 320772 Cheng, Y. C.
Published: (1977)

Anodic oxidation effects at the copper/silicon oxide interface
by: S. Tappertzhofen, et al.
Published: (2022-07-01)

ANALYTICAL MODELING OF NONLINEAR DIFFUSION OF ARSENIC IN SILICON
by: Jeppson, K, et al.
Published: (1987)

A NEW MODEL FOR THE DIFFUSION OF ARSENIC IN POLYCRYSTALLINE SILICON
by: Oneill, A, et al.
Published: (1988)

Influence of silicon on arsenic uptake and toxicity in lettuce
by: Maria Greger, et al.
Published: (2015-10-01)

EFFECTS OF SILICON ON ALLEVIATING ARSENIC TOXICITY IN MAIZE PLANTS
by: Airon José da Silva, et al.
Published: (2015-02-01)

ATOM PROBE STUDIES OF THE COMPOSITION OF LOW-TEMPERATURE OXIDES ON (100) SILICON AND GALLIUM-ARSENIDE SURFACES
by: Grovenor, C, et al.
Published: (1989)

High-resolution secondary ion mass spectrometry reveals the contrasting subcellular distribution of arsenic and silicon in rice roots.
by: Moore, K, et al.
Published: (2011)

Oxidation kinetics of silicon strained by silicon germanium
by: Jarosław Grabowski, et al.
Published: (2023-06-01)

Normalized Characteristics of Laser-Induced Diffusion of Arsenic Dopants in Silicon
by: Oday Hamadi, et al.
Published: (2007-04-01)

Unravelling the silicon-silicon dioxide interface under different operating conditions
by: Nie, S, et al.
Published: (2021)

The growth mechanism in self-assembly nanostructures of silicon/silicon dioxide interface /
by: Fatima Aldaw Idrees, 1988-, et al.
Published: (2013)

Impacts of Curing-Induced Phase Segregation in Silicon Nanoparticle-Based Electrodes
by: Zoey Huey, et al.
Published: (2024-09-01)

A NEUTRON REFLECTIVITY STUDY OF HYDROGENATED SILICON SILICON-OXIDE THIN-FILMS
by: Ashworth, C, et al.
Published: (1989)

Microstructural characterization of transparent silicon oxide permeation barrier coatings on PET
by: Henry, B, et al.
Published: (1998)

Investigation of simultaneous thermal oxidation and nitridation of sputtered zirconium on silicon and silicon carbide in nitrous oxide gas environment
by: Wong, Yew Hoong
Published: (2012)

Biomimetic processing of bioactive interface on silicon substrates
by: Chong, S. C., et al.
Published: (2012)

Entrapment of gold catalyst in silicon/silicon-oxide nanowires
by: Li, Feng Ji, et al.
Published: (2015)

Schottky barrier engineering on dopant-segregated schottky silicon nanowire MOSFETs
by: Chin, Yoke King
Published: (2013)

Vertical silicon nanowire diode with nickel silicide induced dopant segregation
by: Li, Xiang, et al.
Published: (2013)

THE CHARACTERIZATION OF SILICON SURFACES BY TIME-OF-FLIGHT ATOM PROBE ANALYSIS
by: Grovenor, C, et al.
Published: (1982)

METAL INDUCED GRAIN GROWTH IN GERMANIUM AND SILICON THIN FILMS.
by: Grovenor, C, et al.
Published: (1984)

Micro-cantilever testing of diamond - silicon carbide interfaces in silicon carbide bonded diamond materials produced by reactive silicon infiltration
by: J. Ast, et al.
Published: (2021-12-01)

Electrical properties of silicon surfaces and interfaces
by: Burr, Tracey Alexandra, 1967-
Published: (2005)

INTERFACE STATES AT SILICON GRAIN-BOUNDARIES
by: Werner, J
Published: (1989)

Morphology of silicon/silicon-oxide nanowires grown from nickel-coated silicon wafers
by: Li, Feng Ji, et al.
Published: (2015)

CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS
by: V. А. Pilipenko, et al.
Published: (2017-12-01)

Effect of nickel silicide induced dopant segregation on vertical silicon nanowire diode performance
by: Tan, Chuan Seng, et al.
Published: (2014)

Dielectric discontinuity at interfaces in the atomic-scale limit: permittivity of ultrathin oxide films on silicon.
by: Giustino, F, et al.
Published: (2003)