ULTRAHIGH RESOLUTION CHARACTERIZATION OF COMPOUND SEMICONDUCTORS USING PULSED LASER ATOM PROBE TECHNIQUES
The pulsed laser atom probe has been used to characterise III-V semiconductor epilayer and quantum-well structures. The combination of high spatial resolution and good chemical specificity makes it possible to observe very fine scale composition variations in epilayer materials, and also to assess t...
| Главные авторы: | , , |
|---|---|
| Формат: | Journal article |
| Язык: | English |
| Опубликовано: |
1991
|