ULTRAHIGH RESOLUTION CHARACTERIZATION OF COMPOUND SEMICONDUCTORS USING PULSED LASER ATOM PROBE TECHNIQUES
The pulsed laser atom probe has been used to characterise III-V semiconductor epilayer and quantum-well structures. The combination of high spatial resolution and good chemical specificity makes it possible to observe very fine scale composition variations in epilayer materials, and also to assess t...
| Main Authors: | , , |
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| Formato: | Journal article |
| Idioma: | English |
| Publicado: |
1991
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| _version_ | 1826286086434848768 |
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| author | Mackenzie, R Liddle, J Grovenor, C |
| author_facet | Mackenzie, R Liddle, J Grovenor, C |
| author_sort | Mackenzie, R |
| collection | OXFORD |
| description | The pulsed laser atom probe has been used to characterise III-V semiconductor epilayer and quantum-well structures. The combination of high spatial resolution and good chemical specificity makes it possible to observe very fine scale composition variations in epilayer materials, and also to assess the roughness of individual interfaces in quantum-well material. © 1991. |
| first_indexed | 2024-03-07T01:38:34Z |
| format | Journal article |
| id | oxford-uuid:960a6985-e494-4d40-aa48-c3205e871952 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T01:38:34Z |
| publishDate | 1991 |
| record_format | dspace |
| spelling | oxford-uuid:960a6985-e494-4d40-aa48-c3205e8719522022-03-26T23:50:22ZULTRAHIGH RESOLUTION CHARACTERIZATION OF COMPOUND SEMICONDUCTORS USING PULSED LASER ATOM PROBE TECHNIQUESJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:960a6985-e494-4d40-aa48-c3205e871952EnglishSymplectic Elements at Oxford1991Mackenzie, RLiddle, JGrovenor, CThe pulsed laser atom probe has been used to characterise III-V semiconductor epilayer and quantum-well structures. The combination of high spatial resolution and good chemical specificity makes it possible to observe very fine scale composition variations in epilayer materials, and also to assess the roughness of individual interfaces in quantum-well material. © 1991. |
| spellingShingle | Mackenzie, R Liddle, J Grovenor, C ULTRAHIGH RESOLUTION CHARACTERIZATION OF COMPOUND SEMICONDUCTORS USING PULSED LASER ATOM PROBE TECHNIQUES |
| title | ULTRAHIGH RESOLUTION CHARACTERIZATION OF COMPOUND SEMICONDUCTORS USING PULSED LASER ATOM PROBE TECHNIQUES |
| title_full | ULTRAHIGH RESOLUTION CHARACTERIZATION OF COMPOUND SEMICONDUCTORS USING PULSED LASER ATOM PROBE TECHNIQUES |
| title_fullStr | ULTRAHIGH RESOLUTION CHARACTERIZATION OF COMPOUND SEMICONDUCTORS USING PULSED LASER ATOM PROBE TECHNIQUES |
| title_full_unstemmed | ULTRAHIGH RESOLUTION CHARACTERIZATION OF COMPOUND SEMICONDUCTORS USING PULSED LASER ATOM PROBE TECHNIQUES |
| title_short | ULTRAHIGH RESOLUTION CHARACTERIZATION OF COMPOUND SEMICONDUCTORS USING PULSED LASER ATOM PROBE TECHNIQUES |
| title_sort | ultrahigh resolution characterization of compound semiconductors using pulsed laser atom probe techniques |
| work_keys_str_mv | AT mackenzier ultrahighresolutioncharacterizationofcompoundsemiconductorsusingpulsedlaseratomprobetechniques AT liddlej ultrahighresolutioncharacterizationofcompoundsemiconductorsusingpulsedlaseratomprobetechniques AT grovenorc ultrahighresolutioncharacterizationofcompoundsemiconductorsusingpulsedlaseratomprobetechniques |