ULTRAHIGH RESOLUTION CHARACTERIZATION OF COMPOUND SEMICONDUCTORS USING PULSED LASER ATOM PROBE TECHNIQUES
The pulsed laser atom probe has been used to characterise III-V semiconductor epilayer and quantum-well structures. The combination of high spatial resolution and good chemical specificity makes it possible to observe very fine scale composition variations in epilayer materials, and also to assess t...
| Main Authors: | , , |
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| Formato: | Journal article |
| Idioma: | English |
| Publicado em: |
1991
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