Direct observation of depth-dependent atomic displacements associated with dislocations in gallium nitride.

समान संसाधन

• Observation of depth-dependent atomic displacements related to dislocations in GaN by optical sectioning in the STEM
  द्वारा: Lozano, J, और अन्य
  प्रकाशित: (2014)
• The dissociation of the [a plus c] dislocation in GaN
  द्वारा: Hirsch, P, और अन्य
  प्रकाशित: (2013)
• A dissociation mechanism for the [a plus c] dislocation in GaN
  द्वारा: Nellist, P, और अन्य
  प्रकाशित: (2014)
• TEM observations of threading dislocations in gallium nitride under external stimuli
  द्वारा: Kolibalova Eva, और अन्य
  प्रकाशित: (2024-01-01)
• Depth Dependence of Electron Channeling Contrast Imaging in Gallium Nitride
  द्वारा: Lavallee Etienne, और अन्य
  प्रकाशित: (2024-01-01)