Enhanced photosuseeptibility in the insulatorto-metal phase transition in vanadium dioxide
We use optical-pump terahertz-probe spectroscopy to measure the photoinduced phase transition in vanadium dioxide thin films. Our measurements reveal a fluence threshold needed to drive this transition that decreases with increasing temperature.
मुख्य लेखकों: | Hilton, D, Prasankumar, R, Fourmaux, S, Cavalleri, A, Brassard, D, Khakani, E, Keiffer, J, Taylor, A, Averitt, R |
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स्वरूप: | Conference item |
प्रकाशित: |
Optical Society of America
2007
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समान संसाधन
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Enhanced photosusceptibility near Tc for the light-induced insulator-to-metal phase transition in vanadium dioxide.
द्वारा: Hilton, D, और अन्य
प्रकाशित: (2007) -
Enhanced photosusceptibility near T(c) for the light-induced insulator-to-metal phase transition in vanadium dioxide (vol 99, art no 226401, 2007)
द्वारा: Hilton, D, और अन्य
प्रकाशित: (2008) -
Ultrafast Phase Transition in Vanadium Dioxide Driven by Hot-Electron Injection
द्वारा: Prasankumar R. P., और अन्य
प्रकाशित: (2013-03-01) -
Spin injection into vanadium dioxide films from a typical ferromagnetic metal, across the metal–insulator transition of the vanadium dioxide films
द्वारा: Kazuma Tamura, और अन्य
प्रकाशित: (2021-03-01) -
Nanostructured vanadium dioxide with metal to insulator transition : preparation and thermochromic properties
द्वारा: Wang, Ning
प्रकाशित: (2017)