Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy

Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy

Detalles Bibliográficos
Autores principales: Zou, J, Cockayne, D, RussellHarriott, J
Formato: Journal article
Publicado: 1997

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