Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy

Lignende værker

• Inhomogeneous sources of misfit dislocation generation in InxGa1-xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy
  af: Zou, J, et al.
  Udgivet: (1997)
• Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs
  af: RussellHarriott, J, et al.
  Udgivet: (1996)
• MISFIT DISLOCATIONS AND CRITICAL THICKNESS IN INGAAS/GAAS HETEROSTRUCTURE SYSTEMS
  af: Zou, J, et al.
  Udgivet: (1993)
• Oval defects in InGaAs/GaAs heterostructures
  af: Russell-Harriott, J, et al.
  Udgivet: (1998)
• Estimation of the MQW InGaAs/GaAs heterostructures stability to the formation of misfit dislocations
  af: A. A. Maldzhy, et al.
  Udgivet: (2006-12-01)