Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy

Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy

Bibliographic Details
Main Authors:	Zou, J, Cockayne, D, RussellHarriott, J
Format:	Journal article
Published:	1997

Similar Items

Inhomogeneous sources of misfit dislocation generation in InxGa1-xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy
by: Zou, J, et al.
Published: (1997)

Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs
by: RussellHarriott, J, et al.
Published: (1996)

MISFIT DISLOCATIONS AND CRITICAL THICKNESS IN INGAAS/GAAS HETEROSTRUCTURE SYSTEMS
by: Zou, J, et al.
Published: (1993)

Oval defects in InGaAs/GaAs heterostructures
by: Russell-Harriott, J, et al.
Published: (1998)

Lomer-Cottrell misfit dislocations in [001]In0.2Ga0.8As/GaAs single heterostructures
by: Zou, J, et al.
Published: (1996)

Temperature-dependent generation of misfit dislocations in In0.2Ga0.8As/GaAs single heterostructures
by: Zou, J, et al.
Published: (1996)

Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy
by: Russell, J, et al.
Published: (2000)

Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy
by: Russell-Harriott, J, et al.
Published: (1998)

EQUILIBRIUM DISSOCIATION CONFIGURATION OF MISFIT DISLOCATIONS IN LOW STRAINED IN0.1GA0.9AS/GAAS SINGLE HETEROSTRUCTURES
by: Zou, J, et al.
Published: (1993)

MISFIT DISLOCATIONS LYING ALONG (100) IN [001] GAAS/IN0.25GA0.75AS/GAAS QUANTUM-WELL HETEROSTRUCTURES
by: Zou, J, et al.
Published: (1994)

THE GEOMETRY OF MISFIT DISLOCATIONS WITH RESPECT TO THE STRAINED INTERFACE IN [001] IN0.1GA0.9AS/GAAS SINGLE HETEROSTRUCTURES
by: Zou, J, et al.
Published: (1994)

Nucleation of semicircular misfit dislocation loops from the epitaxial surface of strained-layer heterostructures
by: Zou, J, et al.
Published: (1996)

Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots
by: Leon, R, et al.
Published: (1996)

GLIDE OF MISFIT DISLOCATIONS THROUGH MULTILAYER HETEROSTRUCTURES
by: Zou, J, et al.
Published: (1994)

Misfit-dislocation generation by dissociated dislocations in quantum-well heterostructures.
by: Zou, J, et al.
Published: (1994)

Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)
by: Leon, R, et al.
Published: (2000)

Structural evolution and the role of dislocations in InGaAs island formation on GaAs (110) and (111)B surfaces
by: Lobo, C, et al.
Published: (1998)

TEM studies of misfit dislocations in strained-layer heterostructures
by: Zou, J, et al.
Published: (1994)

Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations
by: Jia, Bo Wen, et al.
Published: (2016)

Stable and metastable InGaAs/GaAs island shapes and surfactantlike suppression of the wetting transformation
by: Leon, R, et al.
Published: (1998)

Magneto-photoluminescence study of InGaAs/GaAs quantum wells and quantum dots grown on (111)B GaAs substrate
by: Tyan, S, et al.
Published: (2000)

MISFIT DISLOCATION GENERATION FROM DISSOCIATED THREADING DISLOCATIONS IN STRAINED-LAYER HETEROSTRUCTURES
by: Zou, J, et al.
Published: (1995)

Misfit dislocations nucleated from the surface in strained-layer heterostructures
by: Zou, J, et al.
Published: (1996)

Characteristics of InAlAs/InGaAs heterostructures grown on InP substrates by molecular beam epitaxy
by: Miao, Yubo.
Published: (2009)

THEORETICAL CONSIDERATION OF MISFIT DISLOCATION NUCLEATION BY PARTIAL DISLOCATIONS IN [001] STRAINED-LAYER HETEROSTRUCTURES
by: Zou, J, et al.
Published: (1993)

On-zone axis electron diffraction contrast study of the size of InGaAs/GaAs quantum dots
by: Liao, X, et al.
Published: (1998)

Island shape instabilities and surfactant-like effects in the growth of InGaAs/GaAs quantum dots
by: Leon, R, et al.
Published: (1999)

Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/ GaAs quantum dots
by: Delgado, N. Fernandez, et al.
Published: (2016)

High performance GaAs/AlGaAs radial heterostructure nanowires grown by MOCVD
by: Jiang, N, et al.
Published: (2013)

Transmission electron microscopy study of InGaAs/GaAs structural evolution near the Stranski-Krastanow transformation
by: Wellman, J, et al.
Published: (1999)

Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
by: Paladugu, M, et al.
Published: (2008)

Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications
by: Joyce, H, et al.
Published: (2011)

Improved carrier collection in intermixed InGaAs/GaAs quantum wells
by: Dao, L, et al.
Published: (1998)

Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications
by: Joyce, H, et al.
Published: (2011)

The device applications and characterization of nonstoichiometric GaAs grown by molecular beam epitaxy
by: Smith, Frank William
Published: (2005)

Sequential tunnelling in GaAs/AIGaAs superlattices grown by molecular beam epitaxy
by: Han, Zhiyong.
Published: (2008)

Growth of GaAs/AlGaAs quantum well lasers and GaAs/InGaAs vertical cavity surface emitting lasers by MBE
by: Li, Chaoyong.
Published: (2009)

THEORETICAL CONSIDERATION OF EQUILIBRIUM DISSOCIATION GEOMETRIES OF 60-DEGREES MISFIT DISLOCATIONS IN SINGLE SEMICONDUCTOR HETEROSTRUCTURES
by: Zou, J, et al.
Published: (1995)

Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate
by: Loke, Wan Khai.
Published: (2008)

Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process.
by: Joyce, H, et al.
Published: (2007)