Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
The locking of dislocations by oxygen has been investigated experimentally in Czochralski silicon (Cz-Si) with different concentrations of shallow dopants. Specimens containing well-defined arrays of dislocation half-loops were subjected to isothermal anneals in the 350-550°C temperature range, and...
| Main Authors: | , , , , |
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| Formato: | Journal article |
| Idioma: | English |
| Publicado em: |
American Institute of Physics
2006
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| Assuntos: |