Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
The locking of dislocations by oxygen has been investigated experimentally in Czochralski silicon (Cz-Si) with different concentrations of shallow dopants. Specimens containing well-defined arrays of dislocation half-loops were subjected to isothermal anneals in the 350-550°C temperature range, and...
Príomhchruthaitheoirí: | , , , , |
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Formáid: | Journal article |
Teanga: | English |
Foilsithe / Cruthaithe: |
American Institute of Physics
2006
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Ábhair: |
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Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
Foilsithe / Cruthaithe 2006
Journal article