Dislocation locking in silicon by oxygen and oxygen transport at low temperatures

Dislocation locking in silicon by oxygen and oxygen transport at low temperatures

Dislocation-oxygen interactions in silicon have been studied experimentally and using numerical modelling. Experiments were performed to understand the locking of dislocations by oxygen and to measure the unlocking stress of dislocations in the temperature range 350-900degreesC for different anneali...

Disgrifiad llawn

Manylion Llyfryddiaeth
Prif Awduron:	Senkader, S, Giannattasio, A, Falster, R, Wilshaw, P
Fformat:	Conference item
Cyhoeddwyd:	Trans Tech Publications Ltd 2004

Eitemau Tebyg

Dislocation locking by oxygen in silicon: New insights to oxygen diffusion at low temperatures
gan: Senkader, S, et al.
Cyhoeddwyd: (2002)

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments
gan: Giannattasio, A, et al.
Cyhoeddwyd: (2005)

Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion
gan: Senkader, S, et al.
Cyhoeddwyd: (2001)

Locking of dislocations by oxygen in Cz-silicon
gan: Senkader, S, et al.
Cyhoeddwyd: (1999)

On the locking of dislocations by oxygen in silicon
gan: Senkader, S, et al.
Cyhoeddwyd: (2001)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
gan: Murphy, J, et al.
Cyhoeddwyd: (2006)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
gan: Murphy, J, et al.
Cyhoeddwyd: (2006)

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments (vol 152, pg G460, 2005)
gan: Giannattasio, A, et al.
Cyhoeddwyd: (2005)

On the dislocation-oxygen interactions in Czochralski-grown Si: oxygen diffusion and binding at low temperatures
gan: Senkader, S, et al.
Cyhoeddwyd: (2002)

Dislocation locking by nitrogen impurities in FZ-silicon
gan: Giannattasio, A, et al.
Cyhoeddwyd: (2003)

Impurity locking of dislocations in silicon
gan: Giannattasio, A, et al.
Cyhoeddwyd: (2004)

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
gan: Murphy, J, et al.
Cyhoeddwyd: (2005)

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
gan: Murphy, J, et al.
Cyhoeddwyd: (2005)

The segregation behaviour of oxygen at dislocations in silicon
gan: Senkader, S, et al.
Cyhoeddwyd: (1999)

The influence of nitrogen on dislocation locking in float-zone silicon
gan: Murphy, J, et al.
Cyhoeddwyd: (2005)

The influence of nitrogen on dislocation locking in float-zone silicon
gan: Murphy, J, et al.
Cyhoeddwyd: (2005)

The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon
gan: Giannattasio, A, et al.
Cyhoeddwyd: (2004)

Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking
gan: Alpass, C, et al.
Cyhoeddwyd: (2007)

Generation of dislocation glide loops in Czochralski silicon
gan: Giannattasio, A, et al.
Cyhoeddwyd: (2002)

A study of oxygen dislocation interactions in CZ-Si
gan: Senkader, S, et al.
Cyhoeddwyd: (2000)

The use of numerical simulation to predict the unlocking stress of dislocations in Cz-silicon wafers
gan: Giannattasio, A, et al.
Cyhoeddwyd: (2003)

A room temperature cathodoluminescence study of dislocations in silicon
gan: Stowe, D, et al.
Cyhoeddwyd: (2004)

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
gan: Murphy, J, et al.
Cyhoeddwyd: (2006)

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
gan: Murphy, J, et al.
Cyhoeddwyd: (2006)

Nitrogen in silicon: Transport and mechanical properties
gan: Murphy, J, et al.
Cyhoeddwyd: (2006)

Nitrogen in silicon: Transport and mechanical properties
gan: Murphy, J, et al.
Cyhoeddwyd: (2006)

Near-band gap luminescence at room temperature from dislocations in silicon
gan: Stowe, D, et al.
Cyhoeddwyd: (2003)

The role of dislocations in producing efficient near-bandgap luminescence from silicon
gan: Fraser, K, et al.
Cyhoeddwyd: (2007)

Interaction of oxygen and nitrogen impurities with dislocations in silicon single-crystals
gan: Giannattasio, A
Cyhoeddwyd: (2004)

Nitrogen-doped silicon: Mechanical, transport and electrical properties
gan: Murphy, J, et al.
Cyhoeddwyd: (2006)

The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in silicon
gan: Zeng, Z, et al.
Cyhoeddwyd: (2011)

Nitrogen diffusion and interaction with dislocations in single-crystal silicon
gan: Alpass, C, et al.
Cyhoeddwyd: (2009)

Efficient, room-temperature, near-band gap luminescence by gettering in ion implanted silicon
gan: Stowe, D, et al.
Cyhoeddwyd: (2005)

Onset of slip in silicon containing oxide precipitates
gan: Jurkschat, K, et al.
Cyhoeddwyd: (2001)

Nitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocations
gan: Alpass, C, et al.
Cyhoeddwyd: (2009)

Nitrogen in silicon: Diffusion at 500-750 degrees C and interaction with dislocations
gan: Alpass, C, et al.
Cyhoeddwyd: (2009)

Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon
gan: Alpass, C, et al.
Cyhoeddwyd: (2009)

Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon
gan: Alpass, C, et al.
Cyhoeddwyd: (2008)

Cathodoluminescence assessment of low temperature gettering in silicon and a novel technique for estimating bulk minority carrier lifetime in silicon
gan: Fraser, K, et al.
Cyhoeddwyd: (2008)

TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
gan: Ourmazd, A, et al.
Cyhoeddwyd: (1983)