Dislocation locking in silicon by oxygen and oxygen transport at low temperatures

Dislocation locking in silicon by oxygen and oxygen transport at low temperatures

Dislocation-oxygen interactions in silicon have been studied experimentally and using numerical modelling. Experiments were performed to understand the locking of dislocations by oxygen and to measure the unlocking stress of dislocations in the temperature range 350-900degreesC for different anneali...

Deskribapen osoa

Xehetasun bibliografikoak
Egile Nagusiak:	Senkader, S, Giannattasio, A, Falster, R, Wilshaw, P
Formatua:	Conference item
Argitaratua:	Trans Tech Publications Ltd 2004

Antzeko izenburuak

Dislocation locking by oxygen in silicon: New insights to oxygen diffusion at low temperatures
nork: Senkader, S, et al.
Argitaratua: (2002)

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments
nork: Giannattasio, A, et al.
Argitaratua: (2005)

Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion
nork: Senkader, S, et al.
Argitaratua: (2001)

Locking of dislocations by oxygen in Cz-silicon
nork: Senkader, S, et al.
Argitaratua: (1999)

On the locking of dislocations by oxygen in silicon
nork: Senkader, S, et al.
Argitaratua: (2001)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
nork: Murphy, J, et al.
Argitaratua: (2006)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
nork: Murphy, J, et al.
Argitaratua: (2006)

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments (vol 152, pg G460, 2005)
nork: Giannattasio, A, et al.
Argitaratua: (2005)

On the dislocation-oxygen interactions in Czochralski-grown Si: oxygen diffusion and binding at low temperatures
nork: Senkader, S, et al.
Argitaratua: (2002)

Dislocation locking by nitrogen impurities in FZ-silicon
nork: Giannattasio, A, et al.
Argitaratua: (2003)

Impurity locking of dislocations in silicon
nork: Giannattasio, A, et al.
Argitaratua: (2004)

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
nork: Murphy, J, et al.
Argitaratua: (2005)

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
nork: Murphy, J, et al.
Argitaratua: (2005)

The segregation behaviour of oxygen at dislocations in silicon
nork: Senkader, S, et al.
Argitaratua: (1999)

The influence of nitrogen on dislocation locking in float-zone silicon
nork: Murphy, J, et al.
Argitaratua: (2005)

The influence of nitrogen on dislocation locking in float-zone silicon
nork: Murphy, J, et al.
Argitaratua: (2005)

The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon
nork: Giannattasio, A, et al.
Argitaratua: (2004)

Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking
nork: Alpass, C, et al.
Argitaratua: (2007)

Generation of dislocation glide loops in Czochralski silicon
nork: Giannattasio, A, et al.
Argitaratua: (2002)

A study of oxygen dislocation interactions in CZ-Si
nork: Senkader, S, et al.
Argitaratua: (2000)

The use of numerical simulation to predict the unlocking stress of dislocations in Cz-silicon wafers
nork: Giannattasio, A, et al.
Argitaratua: (2003)

A room temperature cathodoluminescence study of dislocations in silicon
nork: Stowe, D, et al.
Argitaratua: (2004)

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
nork: Murphy, J, et al.
Argitaratua: (2006)

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
nork: Murphy, J, et al.
Argitaratua: (2006)

Nitrogen in silicon: Transport and mechanical properties
nork: Murphy, J, et al.
Argitaratua: (2006)

Nitrogen in silicon: Transport and mechanical properties
nork: Murphy, J, et al.
Argitaratua: (2006)

Near-band gap luminescence at room temperature from dislocations in silicon
nork: Stowe, D, et al.
Argitaratua: (2003)

The role of dislocations in producing efficient near-bandgap luminescence from silicon
nork: Fraser, K, et al.
Argitaratua: (2007)

Interaction of oxygen and nitrogen impurities with dislocations in silicon single-crystals
nork: Giannattasio, A
Argitaratua: (2004)

Nitrogen-doped silicon: Mechanical, transport and electrical properties
nork: Murphy, J, et al.
Argitaratua: (2006)

The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in silicon
nork: Zeng, Z, et al.
Argitaratua: (2011)

Nitrogen diffusion and interaction with dislocations in single-crystal silicon
nork: Alpass, C, et al.
Argitaratua: (2009)

Efficient, room-temperature, near-band gap luminescence by gettering in ion implanted silicon
nork: Stowe, D, et al.
Argitaratua: (2005)

Onset of slip in silicon containing oxide precipitates
nork: Jurkschat, K, et al.
Argitaratua: (2001)

Nitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocations
nork: Alpass, C, et al.
Argitaratua: (2009)

Nitrogen in silicon: Diffusion at 500-750 degrees C and interaction with dislocations
nork: Alpass, C, et al.
Argitaratua: (2009)

Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon
nork: Alpass, C, et al.
Argitaratua: (2009)

Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon
nork: Alpass, C, et al.
Argitaratua: (2008)

Cathodoluminescence assessment of low temperature gettering in silicon and a novel technique for estimating bulk minority carrier lifetime in silicon
nork: Fraser, K, et al.
Argitaratua: (2008)

TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
nork: Ourmazd, A, et al.
Argitaratua: (1983)