Dislocation locking in silicon by oxygen and oxygen transport at low temperatures

Dislocation locking in silicon by oxygen and oxygen transport at low temperatures

Dislocation-oxygen interactions in silicon have been studied experimentally and using numerical modelling. Experiments were performed to understand the locking of dislocations by oxygen and to measure the unlocking stress of dislocations in the temperature range 350-900degreesC for different anneali...

書誌詳細
主要な著者:	Senkader, S, Giannattasio, A, Falster, R, Wilshaw, P
フォーマット:	Conference item
出版事項:	Trans Tech Publications Ltd 2004

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