Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness

Antzeko izenburuak

• Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
  nork: Na, J, et al.
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• Carrier localization mechanisms in InGaN/GaN quantum wells
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• Quantum confined carrier transition in a GaN/InGaN/GaN single quantum well bounded by AlGaN barriers
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• Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
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• Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication
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