Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness

Lignende værker

• Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
  af: Na, J, et al.
  Udgivet: (2006)
• Carrier localization mechanisms in InGaN/GaN quantum wells
  af: Watson-Parris, D, et al.
  Udgivet: (2011)
• Quantum confined carrier transition in a GaN/InGaN/GaN single quantum well bounded by AlGaN barriers
  af: Park, Y, et al.
  Udgivet: (2011)
• Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication
  af: Lee, Mei Yee, et al.
  Udgivet: (2020)
• The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures
  af: Hammersley, S, et al.
  Udgivet: (2012)