Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness

Ижил төстэй зүйлс

• Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
  -н: Na, J, зэрэг
  Хэвлэсэн: (2006)
• Carrier localization mechanisms in InGaN/GaN quantum wells
  -н: Watson-Parris, D, зэрэг
  Хэвлэсэн: (2011)
• Quantum confined carrier transition in a GaN/InGaN/GaN single quantum well bounded by AlGaN barriers
  -н: Park, Y, зэрэг
  Хэвлэсэн: (2011)
• Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication
  -н: Lee, Mei Yee, зэрэг
  Хэвлэсэн: (2020)
• The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures
  -н: Hammersley, S, зэрэг
  Хэвлэсэн: (2012)