Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness

Geahča maid

• Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
  Dahkki: Na, J, et al.
  Almmustuhtton: (2006)
• Carrier localization mechanisms in InGaN/GaN quantum wells
  Dahkki: Watson-Parris, D, et al.
  Almmustuhtton: (2011)
• Quantum confined carrier transition in a GaN/InGaN/GaN single quantum well bounded by AlGaN barriers
  Dahkki: Park, Y, et al.
  Almmustuhtton: (2011)
• Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication
  Dahkki: Lee, Mei Yee, et al.
  Almmustuhtton: (2020)
• The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures
  Dahkki: Hammersley, S, et al.
  Almmustuhtton: (2012)