Growth mechanism of truncated triangular GaAs nanowires
During the growth of GaAs nanowires on the {111}B GaAs substrate, truncated triangular GaAs nanowires were commonly observed in the bottom region of nanowires. Through detailed structural analysis by electron microscopy, we have determined the growth mechanism of truncated triangular GaAs nanowires....
| Autors principals: | , , , , , , , , , |
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| Format: | Conference item |
| Publicat: |
2006
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