Picosecond time-resolved photoluminescence at detection wavelengths greater than 1500 nm.
We report what is to our knowledge the first application of high-efficiency InGaAs/InP photon-counting diode detectors in time-resolved photoluminescence measurements at wavelength greater than 1500 nm. When they were cooled to 77 K and used in conjunction with the time-correlated single-photon coun...
| Príomhchruthaitheoirí: | , , |
|---|---|
| Formáid: | Journal article |
| Teanga: | English |
| Foilsithe / Cruthaithe: |
2001
|
| Achoimre: | We report what is to our knowledge the first application of high-efficiency InGaAs/InP photon-counting diode detectors in time-resolved photoluminescence measurements at wavelength greater than 1500 nm. When they were cooled to 77 K and used in conjunction with the time-correlated single-photon counting technique, the detectors were capable of an instrumental response of 230 ps and a noise equivalent power of 2x10(-17)W Hz(-1/2) . Preliminary measurement of a semiconductor heterostructure indicates sensitivity at photogenerated carrier densities as low as 10(14)cm (-3) . This development facilitates the detailed characterization of dominant recombination mechanisms in semiconductor optoelectronic materials and devices designed to operate in the third telecommunications spectral window. |
|---|