Interface and layer thickness dependence of the effective mass in InAs/GaSb superlattices studied by high field cyclotron resonance
The effective mass has been studied in a series of semiconducting and semimetallic InAs/GaSb superlattices as a function of superlattice period and band gap. The mass is found to be determined almost entirely by the superlattice period, and is relatively insensitive to both the ratio of the InAs to...
| Автори: | , , , , , |
|---|---|
| Формат: | Conference item |
| Опубліковано: |
1996
|