Adsorption, etching and photo-induced reactions at the Si(100)-CCl 4 interface
The adsorption, thermal and photochemical reactions of carbon tetrachloride on Si(100) were investigated using X-ray photoelectron spectroscopy and thermal desorption spectroscopy. Initial CCl4 adsorption is dissociative at 175 K, with CCl4 multilayer formation at higher exposures. Silicon chlorides...
| Main Authors: | , , , |
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| פורמט: | Journal article |
| שפה: | English |
| יצא לאור: |
1989
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