An investigation of doping of SnO2 by ion implantation and application of ion-implanted films as gas sensors
Thin films of SnO2 were doped with 90 keV ions of Nb, Sb and Bi at a dose of 3 × 1016 ions cm-2. The implanted films were characterized by X-ray and ultraviolet photoemission spectroscopy, Auger depth profiling and sheet resistance measurements. Sb produces the most dramatic reduction in sheet resis...
| Main Authors: | , , , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
1996
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