Skip to content
VuFind
English
Deutsch
Español
Français
Italiano
日本語
Nederlands
Português
Português (Brasil)
中文(简体)
中文（繁體）
Türkçe
עברית
Gaeilge
Cymraeg
Ελληνικά
Català
Euskara
Русский
Čeština
Suomi
Svenska
polski
Dansk
slovenščina
اللغة العربية
বাংলা
Galego
Tiếng Việt
Hrvatski
हिंदी
Հայերէն
Українська
Sámegiella
Монгол
Language
All Fields
Title
Author
Subject
Call Number
ISBN/ISSN
Tag
Find
Advanced
Gas-source growth of group IV...
Cite this
Text this
Email this
Print
Export Record
Export to RefWorks
Export to EndNoteWeb
Export to EndNote
Permanent link
Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)
Bibliographic Details
Main Authors:
Goldfarb, I
,
Owen, J
,
Hayden, P
,
Bowler, DR
,
Miki, K
,
Briggs, G
Format:
Journal article
Published:
1997
Holdings
Description
Similar Items
Staff View
Similar Items
Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms
by: Owen, J, et al.
Published: (1997)
Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies
by: Goldfarb, I, et al.
Published: (1997)
Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
by: Owen, J, et al.
Published: (1997)
Competing growth mechanisms of Ge/Si(001) coherent clusters
by: Goldfarb, I, et al.
Published: (1997)
Nucleation of ''hut'' pits and clusters during gas-source molecular-beam epitaxy of Ge/Si(001) in in situ scanning tunnelng microscopy
by: Goldfarb, I, et al.
Published: (1997)