Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)
Autors principals: | Goldfarb, I, Owen, J, Hayden, P, Bowler, DR, Miki, K, Briggs, G |
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Format: | Journal article |
Publicat: |
1997
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Ítems similars
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Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms
per: Owen, J, et al.
Publicat: (1997) -
Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies
per: Goldfarb, I, et al.
Publicat: (1997) -
Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
per: Owen, J, et al.
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Competing growth mechanisms of Ge/Si(001) coherent clusters
per: Goldfarb, I, et al.
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Nucleation and growth of CoSi2 dots on Si(001)
per: Goldfarb, I, et al.
Publicat: (1999)