Observation of a blocking to channeling transition for MeV protons at stacking faults in silicon.
Images of stacking faults in silicon have been produced using transmitted, channeled protons. They reveal that when the proton beam angle to the (111) channeling planes is slightly reater than the channeling critical angle, the mean energy loss of protons passing through a stacking fault is less tha...
| Những tác giả chính: | , , , , |
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| Định dạng: | Journal article |
| Ngôn ngữ: | English |
| Được phát hành: |
1995
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