Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping.
Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a non-contact method based on time resolved terahertz photoconductivity for assessing n and p type doping efficiency in nanowires. Using this technique, we mea...
| Үндсэн зохиолчид: | , , , , , , , , , |
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| Формат: | Journal article |
| Хэл сонгох: | English |
| Хэвлэсэн: |
American Chemical Society
2016
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