Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping.
Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a non-contact method based on time resolved terahertz photoconductivity for assessing n and p type doping efficiency in nanowires. Using this technique, we mea...
| Main Authors: | , , , , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
American Chemical Society
2016
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| _version_ | 1826288334551384064 |
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| author | Boland, J Casadei, A Tutuncuoglu, G Matteini, F Davies, C Jabeen, F Joyce, H Herz, L Fontcuberta I Morral, A Johnston, M |
| author_facet | Boland, J Casadei, A Tutuncuoglu, G Matteini, F Davies, C Jabeen, F Joyce, H Herz, L Fontcuberta I Morral, A Johnston, M |
| author_sort | Boland, J |
| collection | OXFORD |
| description | Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a non-contact method based on time resolved terahertz photoconductivity for assessing n and p type doping efficiency in nanowires. Using this technique, we measure extrinsic electron and hole concentrations in excess of 10(18)cm(-3) for GaAs nanowires with n-type and p-type doped shells. Furthermore, we show that controlled doping can significantly increase the photoconductivity lifetime of GaAs nanowires by over an order of magnitude: from 0.13ns in undoped nanowires to 3.8ns and 2.5ns in n-doped and p-doped nanowires respectively. Thus, controlled doping can be used to reduce the effects of parasitic surface recombination in optoelectronic nanowire devices, which is promising for nanowire devices such as solar cells and nanowire lasers. |
| first_indexed | 2024-03-07T02:12:08Z |
| format | Journal article |
| id | oxford-uuid:a103f012-3585-4b86-93af-e6747866b08c |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T02:12:08Z |
| publishDate | 2016 |
| publisher | American Chemical Society |
| record_format | dspace |
| spelling | oxford-uuid:a103f012-3585-4b86-93af-e6747866b08c2022-03-27T02:09:51ZIncreased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping.Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:a103f012-3585-4b86-93af-e6747866b08cEnglishSymplectic Elements at OxfordAmerican Chemical Society2016Boland, JCasadei, ATutuncuoglu, GMatteini, FDavies, CJabeen, FJoyce, HHerz, LFontcuberta I Morral, AJohnston, MControlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a non-contact method based on time resolved terahertz photoconductivity for assessing n and p type doping efficiency in nanowires. Using this technique, we measure extrinsic electron and hole concentrations in excess of 10(18)cm(-3) for GaAs nanowires with n-type and p-type doped shells. Furthermore, we show that controlled doping can significantly increase the photoconductivity lifetime of GaAs nanowires by over an order of magnitude: from 0.13ns in undoped nanowires to 3.8ns and 2.5ns in n-doped and p-doped nanowires respectively. Thus, controlled doping can be used to reduce the effects of parasitic surface recombination in optoelectronic nanowire devices, which is promising for nanowire devices such as solar cells and nanowire lasers. |
| spellingShingle | Boland, J Casadei, A Tutuncuoglu, G Matteini, F Davies, C Jabeen, F Joyce, H Herz, L Fontcuberta I Morral, A Johnston, M Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping. |
| title | Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping. |
| title_full | Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping. |
| title_fullStr | Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping. |
| title_full_unstemmed | Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping. |
| title_short | Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping. |
| title_sort | increased photoconductivity lifetime in gaas nanowires by controlled n type and p type doping |
| work_keys_str_mv | AT bolandj increasedphotoconductivitylifetimeingaasnanowiresbycontrolledntypeandptypedoping AT casadeia increasedphotoconductivitylifetimeingaasnanowiresbycontrolledntypeandptypedoping AT tutuncuoglug increasedphotoconductivitylifetimeingaasnanowiresbycontrolledntypeandptypedoping AT matteinif increasedphotoconductivitylifetimeingaasnanowiresbycontrolledntypeandptypedoping AT daviesc increasedphotoconductivitylifetimeingaasnanowiresbycontrolledntypeandptypedoping AT jabeenf increasedphotoconductivitylifetimeingaasnanowiresbycontrolledntypeandptypedoping AT joyceh increasedphotoconductivitylifetimeingaasnanowiresbycontrolledntypeandptypedoping AT herzl increasedphotoconductivitylifetimeingaasnanowiresbycontrolledntypeandptypedoping AT fontcubertaimorrala increasedphotoconductivitylifetimeingaasnanowiresbycontrolledntypeandptypedoping AT johnstonm increasedphotoconductivitylifetimeingaasnanowiresbycontrolledntypeandptypedoping |