Realization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicals
High mobility p-type ZnO:AlN thin films have been efficiently realized by utilizing pre-activated nitrogen (N) plasma sources with an inductively coupled dual target co-sputtering system. High density of N-plasma-radicals was generated with an additional RF power applied through a ring-shaped quartz...
| मुख्य लेखकों: | , , , , , |
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| स्वरूप: | Journal article |
| भाषा: | English |
| प्रकाशित: |
2009
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| सारांश: | High mobility p-type ZnO:AlN thin films have been efficiently realized by utilizing pre-activated nitrogen (N) plasma sources with an inductively coupled dual target co-sputtering system. High density of N-plasma-radicals was generated with an additional RF power applied through a ring-shaped quartz-tube located inside the chamber during co-sputtering process. The AlN codoped ZnO film shows excellent p-type behavior with a high mobility and a hole concentration of 154 cm2°V- 1s- 1 and about 3 × 1018°cm- 3 at 600 °C, respectively. Electrical properties of p-n homo-junction devices based on p-type ZnO film are also discussed. © 2009 Elsevier B.V. |
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