Realization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicals
High mobility p-type ZnO:AlN thin films have been efficiently realized by utilizing pre-activated nitrogen (N) plasma sources with an inductively coupled dual target co-sputtering system. High density of N-plasma-radicals was generated with an additional RF power applied through a ring-shaped quartz...
| Հիմնական հեղինակներ: | , , , , , |
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| Ձևաչափ: | Journal article |
| Լեզու: | English |
| Հրապարակվել է: |
2009
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| _version_ | 1826288776702328832 |
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| author | Lee, J Lee, J Cha, S Kim, J Seo, D Bin Im, W Hong, J |
| author_facet | Lee, J Lee, J Cha, S Kim, J Seo, D Bin Im, W Hong, J |
| author_sort | Lee, J |
| collection | OXFORD |
| description | High mobility p-type ZnO:AlN thin films have been efficiently realized by utilizing pre-activated nitrogen (N) plasma sources with an inductively coupled dual target co-sputtering system. High density of N-plasma-radicals was generated with an additional RF power applied through a ring-shaped quartz-tube located inside the chamber during co-sputtering process. The AlN codoped ZnO film shows excellent p-type behavior with a high mobility and a hole concentration of 154 cm2°V- 1s- 1 and about 3 × 1018°cm- 3 at 600 °C, respectively. Electrical properties of p-n homo-junction devices based on p-type ZnO film are also discussed. © 2009 Elsevier B.V. |
| first_indexed | 2024-03-07T02:18:49Z |
| format | Journal article |
| id | oxford-uuid:a334d45e-6c3b-43a6-8f0a-d30dbe4071ff |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T02:18:49Z |
| publishDate | 2009 |
| record_format | dspace |
| spelling | oxford-uuid:a334d45e-6c3b-43a6-8f0a-d30dbe4071ff2022-03-27T02:25:12ZRealization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicalsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:a334d45e-6c3b-43a6-8f0a-d30dbe4071ffEnglishSymplectic Elements at Oxford2009Lee, JLee, JCha, SKim, JSeo, DBin Im, WHong, JHigh mobility p-type ZnO:AlN thin films have been efficiently realized by utilizing pre-activated nitrogen (N) plasma sources with an inductively coupled dual target co-sputtering system. High density of N-plasma-radicals was generated with an additional RF power applied through a ring-shaped quartz-tube located inside the chamber during co-sputtering process. The AlN codoped ZnO film shows excellent p-type behavior with a high mobility and a hole concentration of 154 cm2°V- 1s- 1 and about 3 × 1018°cm- 3 at 600 °C, respectively. Electrical properties of p-n homo-junction devices based on p-type ZnO film are also discussed. © 2009 Elsevier B.V. |
| spellingShingle | Lee, J Lee, J Cha, S Kim, J Seo, D Bin Im, W Hong, J Realization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicals |
| title | Realization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicals |
| title_full | Realization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicals |
| title_fullStr | Realization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicals |
| title_full_unstemmed | Realization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicals |
| title_short | Realization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicals |
| title_sort | realization of high mobility p type co doped zno aln film with a high density of nitrogen radicals |
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