Realization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicals
High mobility p-type ZnO:AlN thin films have been efficiently realized by utilizing pre-activated nitrogen (N) plasma sources with an inductively coupled dual target co-sputtering system. High density of N-plasma-radicals was generated with an additional RF power applied through a ring-shaped quartz...
Main Authors: | Lee, J, Cha, S, Kim, J, Seo, D, Bin Im, W, Hong, J |
---|---|
Format: | Journal article |
Language: | English |
Published: |
2009
|
Similar Items
-
Growth of nitrogen doped ZnO films through a nitrogen diffusion process from WN films formed by a cosputtering technique
by: Lee, J, et al.
Published: (2008) -
The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films
by: S. Venkatesh, et al.
Published: (2016-03-01) -
Dominant factor determining the conduction-type of nitrogen-doped ZnO film
by: Li, L., et al.
Published: (2014) -
P-type conduction characteristics of lithium-doped ZnO nanowires.
by: Lee, J, et al.
Published: (2011) -
Enhancement of the near-band-edge electroluminescence from the active ZnO layer in the ZnO/GaN-based light emitting diodes using AlN-ZnO/ZnO/AlN-ZnO double heterojunction structure
by: Bo-Rui Huang, et al.
Published: (2021-01-01)