Surface ionisation of molecular H2 and atomic H Rydberg states at doped silicon surfaces

Surface ionisation of molecular H2 and atomic H Rydberg states at doped silicon surfaces

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The detection of ions or electrons from the surface ionisation of molecular H2 and atomic H Rydberg states incident at doped Si surfaces is investigated experimentally to analyse the effect of the dopant charge distribution on the surface-ionisation processes. In both experimental studies, the molec...

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Библиографические подробности
Главные авторы:	Sashikesh, G, So, E, Ford, MS, Softley, T
Формат:	Conference item
Опубликовано:	Taylor and Francis Ltd. 2014

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