Surface ionisation of molecular H2 and atomic H Rydberg states at doped silicon surfaces

The detection of ions or electrons from the surface ionisation of molecular H2 and atomic H Rydberg states incident at doped Si surfaces is investigated experimentally to analyse the effect of the dopant charge distribution on the surface-ionisation processes. In both experimental studies, the molec...

詳細記述

書誌詳細
主要な著者: Sashikesh, G, So, E, Ford, MS, Softley, T
フォーマット: Conference item
出版事項: Taylor and Francis Ltd. 2014