THERMAL-DECOMPOSITION OF TRIETHYLGALLIUM ON GAAS(100) IN THE PRESENCE OF AL AND IN
The interaction of triethylgallium (TEG) with the Ga-stabilised GaAs(100) surface in the presence of In and Al has been investigated using AES, HREELS and TDS techniques. Detailed information on the surface chemistry of TEG on clean GaAs is already available and this work is directed towards examini...
| Main Authors: | , |
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| Format: | Journal article |
| Language: | English |
| Published: |
1992
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