Increased photoconductivity lifetimes in GaAs nanowires via n-type and p-type shell doping

Reliable doping in GaAs nanowires is essential for the development of novel optoelectronic devices. Previously, GaAs nanowires have been shown to exhibit extremely short photoconductivity lifetimes of a few picoseconds due to their high surface recombination velocity, which is detrimental for nanowi...

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Главные авторы: Boland, J, Casadei, A, Tutuncouglu, G, Matteini, F, Davies, C, Gaveen, F, Amaduzzi, F, Joyce, H, Herz, L, Fontcuberta i Morral, A, Johnston, M
Формат: Conference item
Опубликовано: IEEE 2016