Increased photoconductivity lifetimes in GaAs nanowires via n-type and p-type shell doping
Reliable doping in GaAs nanowires is essential for the development of novel optoelectronic devices. Previously, GaAs nanowires have been shown to exhibit extremely short photoconductivity lifetimes of a few picoseconds due to their high surface recombination velocity, which is detrimental for nanowi...
| Главные авторы: | , , , , , , , , , , |
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| Формат: | Conference item |
| Опубликовано: |
IEEE
2016
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