Deep level impurity engineered semi-insulating Cz-silicon as microwave substrates
We show that deep level doping of Czochralski-grown silicon wafers is capable of providing high resistivity handle wafers suitable for radio frequency integrated circuits, in particular integrated passive devices (IPD) and 3D integration. Starting from n-type 50 Ωcm Czochralski silicon wafers, we us...
| Main Authors: | , , , , |
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| Format: | Conference item |
| Published: |
2011
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