Saltar ao contenido
VuFind
English
Deutsch
Español
Français
Italiano
日本語
Nederlands
Português
Português (Brasil)
中文(简体)
中文（繁體）
Türkçe
עברית
Gaeilge
Cymraeg
Ελληνικά
Català
Euskara
Русский
Čeština
Suomi
Svenska
polski
Dansk
slovenščina
اللغة العربية
বাংলা
Galego
Tiếng Việt
Hrvatski
हिंदी
Հայերէն
Українська
Sámegiella
Монгол
Idioma
Todos os campos
Title
Autor
Subject
Número de Clasificación
ISBN/ISSN
Tag
Buscar
Avanzado
EBIC INVESTIGATIONS OF DISLOCA...
Citar
Text this
Enviar este rexistro por email
Imprimir
Exportar rexistro
Exportar a RefWorks
Exportar a EndNoteWeb
Exportar a EndNote
Permanent link
EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON
Detalles Bibliográficos
Main Authors:
Fell, T
,
Wilshaw, P
,
Decoteau, M
Formato:
Journal article
Publicado:
1993
Existencias
Descripción
Títulos similares
Staff View
Títulos similares
QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
por: Fell, T, et al.
Publicado: (1991)
QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
por: Fell, T, et al.
Publicado: (1991)
AN EBIC INVESTIGATION OF ALPHA, BETA AND SCREW DISLOCATIONS IN GALLIUM-ARSENIDE
por: Galloway, S, et al.
Publicado: (1993)
An SEM EBIC study of the electronic properties of dislocations in silicon
por: Wilshaw, P, et al.
Publicado: (1984)
TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
por: Ourmazd, A, et al.
Publicado: (1983)