EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON

Podobne zapisy

• QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
  od: Fell, T, i wsp.
  Wydane: (1991)
• QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
  od: Fell, T, i wsp.
  Wydane: (1991)
• AN EBIC INVESTIGATION OF ALPHA, BETA AND SCREW DISLOCATIONS IN GALLIUM-ARSENIDE
  od: Galloway, S, i wsp.
  Wydane: (1993)
• An SEM EBIC study of the electronic properties of dislocations in silicon
  od: Wilshaw, P, i wsp.
  Wydane: (1984)
• TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
  od: Ourmazd, A, i wsp.
  Wydane: (1983)