A PHOTOEMISSION-STUDY OF ELECTRON-STATES IN SB-ION IMPLANTED TIO2(110)
Ion implantation has been used to dope single-crystal TiO2(110) in the near-surface region. The Sb dopant quenches an electronic state at about 1 eV binding energy usually observed in photoemission from undoped TiO2 and produces a new electronic surface state toward the bottom of the bulk bandgap. T...
| Päätekijät: | , , , |
|---|---|
| Aineistotyyppi: | Journal article |
| Kieli: | English |
| Julkaistu: |
1995
|